An N-Channel MOSFET uses electrons to create a current channel. When the MOSFET is active and switched on, electrons can move fast and readily via the current. The mobility of the carriers in N-Channel MOSFETs is approximately 2 to 3 times higher than in P-channel MOSFETs for the same RDS(on) value, thus the P-Channel chip must be 2 to 3 times the size of the N-Channel chip. As a result, MOSFET transistor N-Channels are frequently preferred for high current
Features
- Low Gate-to-Drain Charge to Reduce Switching Losses
- Fully Characterized Capacitance Including Effective Coss to Simplify Design
- Fully Characterized Avalanche Voltage and Current
Applications
. Higher switching frequencies will allow you to design supplies with considerably wider control-loop bandwidth which can be provided by IRFB38N20, which is typically between a fifth and a tenth of the switching frequency. This is important because the wider the loop bandwidth, the fewer output filter capacitors are needed, leading to a cheaper design and smaller pc-board footprints. IRFB38N20 is an N-Channel Power MOSFET Transistor used in high-frequency DC-DC converters.
Features
- Low Gate-to-Drain Charge to Reduce Switching Losses
- Fully Characterized Capacitance Including Effective Coss to Simplify Design
- Fully Characterized Avalanche Voltage and Current
Specification
|
Model |
IRFB38N20 |
|
Brand |
IR Technologies |
|
Transistor Polarity |
N-Channel |
|
Vds - Drain-Source Breakdown Voltage |
200 V |
|
Id - Continuous Drain Current |
43 A |
|
Rds On - Drain-Source Resistance |
54 mOhms |
|
Vgs - Gate-Source Voltage |
-30 V - + 30 V |
|
Vgs th - Gate-Source Threshold Voltage |
3 V - 5 V |
|
Operating Voltage |
-55°C - 175°C |
|
Package |
TO-220 |
FAQs
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