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IGBT designs that do not require a punch through are the HGTG5N120BND and HGTP5N120BND. They are brand-new IGBTs that are MOS gated for high voltage switching. IGBTs combine the greatest elements of bipolar transistors and MOSFETs. This device combines the low on-state conduction loss of a bipolar transistor with the high input impedance of a MOSFET. The IGBT in use is a TA49308 development type. The TA49058 development type diode is utilized (Part number RHRD6120). The IGBT is appropriate for a variety of high-voltage switching

Features

  • Its used in switching operation

  • 1200V Switching SOA Capability

  • Short Circuit Rating

  • Low leakage current

  • It has the capability to improved dv/dT

  • 100% avalanche energy rated

Applications

that operate at moderate frequencies and require minimal conduction losses, such as drivers for solenoids, relays, and contactors, AC and DC motor controllers, and power supplies.

Features

  • Its used in switching operation

  • 1200V Switching SOA Capability

  • Short Circuit Rating

  • Low leakage current

  • It has the capability to improved dv/dT

  • 100% avalanche energy rated

Specification

Model 5N120BND 
Type MOSFET
Package TO-247
Forward current 21A
Reverse Voltage 1200V
Tc 25 Degree centigrade
Typical fall time 175nS
Operating and Storage Temperature Range -55°C TO 150°C

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