50N06L N-Channel MOSFET

Description

 50N06L N-Channel enhancement mode power field effect transistors were created to use the exclusive planar stripe DMOS process developed by Fairchild. This cutting-edge technology has been specifically designed to reduce on-state resistance, deliver more excellent switching performance, and withstand high-energy pulses in the avalanche and commutation modes. These components are ideal for low-voltage uses, including automotive, DC/DC converters, and high-efficiency switching for power management in mobile and battery-powered goods.

Features

• Low gate charge ( typical 31 n C)

• 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V

• Fast switching
• 175°C maximum junction temperature rating
• 100% avalanche tested

Specifications