5N120BND Power MOSFET

Description

IGBT designs that do not require a punch through are the HGTG5N120BND and HGTP5N120BND. They are brand-new IGBTs that are MOS gated for high voltage switching. IGBTs combine the greatest elements of bipolar transistors and MOSFETs. This device combines the low on-state conduction loss of a bipolar transistor with the high input impedance of a MOSFET. The IGBT in use is a TA49308 development type. The TA49058 development type diode is utilized (Part number RHRD6120). The IGBT is appropriate for a variety of high-voltage switching applications that operate at moderate frequencies and require minimal conduction losses, such as drivers for solenoids, relays, and contactors, AC and DC motor controllers, and power supplies.

Features

• Its used in switching operation

• 1200V Switching SOA Capability

• Short Circuit Rating

• Low leakage current

• It has the capability to improved dv/dT

• 100% avalanche energy rated

Specification