Description
B688 Transistor is a High Power PNP Transistor, It is a Through-hole(THD) active component that consists of three terminals Base, Collector, and Emitter. It is a Triple diffused PNP transistor.
Specification
Model | B688 |
Brand | Korea |
Collector-Base Voltage (VCBO) | -120V |
Collector-Emitter Voltage (VCEO) | -120V |
Emitter-Base voltage (VEBO) | -5V |
Collector Current (IC) | -10A |
Base Current (IB) | -1A |
Collector Power Dissipation | 80W |
Junction Temperature | 150 (Degree C) |
Storage Temperature Range | -55~150 (Degree C) |
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