• IXBH5N160G 1600V, 5A Monolithic Bipolar MOS Transistor
  • IXBH5N160G 1600V, 5A Monolithic Bipolar MOS Transistor
  • IXBH5N160G 1600V, 5A Monolithic Bipolar MOS Transistor
1 3
Industrial Components

IXBH5N160G 1600V, 5A Monolithic Bipolar MOS Transistor

IXBH5N160G 1600V, 5A Monolithic Bipolar MOS Transistor

Rs. 367.00
Rs. 0.00 Rs. 367.00

It is a High Voltage BIMOSFET that can replace high voltage MOSFETs because of its much lower voltage drop and control that is compatible with MOSFETs. Fast switching for high-frequency operation, a gate voltage of...

SKU: II19
Vendor: electronifyindia
Type: Best Selling Products

Availability: Low stock

delivery-truck Estimated Delivery Date : 5 - 9 December, 2024

Return rules summary

  • Returns accepted for 7 days
  • Free return shipping
  • No restocking fee

Guaranteed safe checkout

Shopify Secure Amazon Pay Amex Diners Club Discover Google Pay Visa
View full details

Description

It is a High Voltage BIMOSFET that can replace high voltage MOSFETs because of its much lower voltage drop and control that is compatible with MOSFETs. Fast switching for high-frequency operation, a gate voltage of 10V, and reverse conduction capability Furthermore, this comes in the industry-standard TO-220AB - TO-247AD epoxy satisfies the UL94V-0 box. Switched-mode power supplies, DC-DC converters, X-ray, and laser generators. resonant converters and lamp ballasts are only a few of the numerous applications covered by the extensive portfolio. 

Features
  • High Voltage BIMOSFET
  • MOSFET compatible control 10 V turn-on gate voltage
  • Fast switching for high-frequency operation 
  • Reverse conduction capability
  • Industry-standard package
Specifications
Model IXBH5N160G
Brand IXYS
Type BIMOSFET
Collector-Emitter Sustaining Voltage at 25°C 1600 v (max)
Gate-Emitter Sustaining Voltage at 25°C ± 20V
Maximum total power dissipation 68 W
Continuous Collector Current 5.7 A
Operating and Storage Temperature Range -40°C TO 150°C

 


Featured Collection

View all