RURG8060 Ultrafast diode

Description

An ultrafast diode with soft recovery properties (t r r 75ns), the RURG8060. It is of silicon nitride passivated ion-implanted epitaxial planar structure with low forward voltage drop. This component is designed to be used in a range of switching power supply and other power switching applications as a freewheeling/clamping diode and rectifier. Its low stored charge and rapid recovery with soft recovery feature reduce electrical noise and ringing in many switching circuits, hence lowering switching transistor power loss.

Features

• Its ultrafast  with soft recovery time <75nS

• its max reverse voltage is 600V

• Its operating temperature is 175 degree centigrade

• avalanche energy rated

Specification